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BC846- BC850 NPN Epitaxial Silicon Transistor
August 2006
BC846- BC850
NPN Epitaxial Silicon Transistor Features
* Switching and Amplifier Applications * Suitable for automatic insertion in thick and thin-film circuits * Low Noise: BC849, BC850 * Complement to BC856 ... BC860
2 1 3
tm
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
VCBO Collector-Base Voltage
Ta = 25C unless otherwise noted
Parameter
: BC846 : BC847/850 : BC848/849
Value
80 50 30 65 45 30 6 5 100 310 150 -65 ~ 150
Units
V V V V V V V V mA mW C C
VCEO
Collector-Emitter Voltage : BC846 : BC847/850 : BC848/849 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC846/847 : BC848/849/850
VEBO IC PC TJ TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25C unless otherwise noted
Symbol
ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF
Parameter
Collector Cut-off Current DC Current Gain
Test Condition
VCB=30V, IE=0 VCE=5V, IC=2mA
Min.
110
Typ.
Max.
15 800
Units
nA
Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC846/847/848 : BC849/850 : BC849 : BC850 IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE= 5V, IC= 200A RG=2K, f=1KHz VCE= 5V, IC= 200A RG=2K, f=30~15000Hz 580
90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4
250 600
mV mV mV mV
700 720
mV mV MHz
6
pF pF
10 4 4 3
dB dB dB dB
* Pulse Test: Pulse Width300s, Duty Cycle2%
(c)2006 Fairchild Semiconductor Corporation
1
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BC846- BC850 Rev. B
BC846- BC850 NPN Epitaxial Silicon Transistor
hFE Classification
Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800
Ordering Information
Device(note1)
BC846AMTF BC846BMTF BC846CMTF BC847AMTF BC847BMTF BC847CMTF BC848AMTF BC848BMTF BC848CMTF BC849AMTF BC849BMTF BC849CMTF BC850AMTF BC850BMTF BC850CMTF
Note1 :
Device Marking
8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC
Package
SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
Packing Method
Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel
Qty(pcs)
3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000
Pin Difinitions
1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector
Affix "-A,-B,-C" means hFE classification. Affix "-M" means the matte type package. Affix "-TF" means the tape & reel type packing.
2 BC846- BC850 Rev. B
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BC846- BC850 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
100
10000
IC[mA], COLLECTOR CURRENT
80
IB = 400A IB = 350A
VCE = 5V
hFE, DC CURRENT GAIN
IB = 300A
60
IB = 250A IB = 200A
1000
40
IB = 150A IB = 100A
100
20
IB = 50A
0 0 4 8 12 16 20
10 1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10000
100
IC = 10 IB
1000
VBE(sat)
IC[mA], COLLECTOR CURRENT
VCE = 2V
10
100
1
VCE(sat)
10 1 10 100 1000
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
100
1000
f=1MHz
VCE=5V
Cob[pF], CAPACITANCE
10
100
1
10
0.1 1 10 100 1000
1 0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
3 BC846- BC850 Rev. B
www.fairchildsemi.com
BC846- BC850 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 0.03 0.96~1.14 2.90 0.10
0.12 -0.023
+0.05
0.95 0.03 0.95 0.03 1.90 0.03 0.508REF
0.97REF
Dimensions in Millimeters
4 BC846- BC850 Rev. B
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BC846- BC850 NPN Epitaxial Silicon Transistor BC846- BC850 NPN Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
5 BC846- BC850 Rev. B
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